Activities — International Conferences —



International Conferences


Study on quantum efficiency of NEA-GaAs with various thermal treatments; The increase in quantum efficiency by the low temperature treatment.
K. Hayase, K. Suzuki, Y. Inagaki, H. Iijima, T. Meguro
5the International Particle Accelerator Conference (IPAC14), (Dresden,Germany, June 15 - 20, 2014).

Electron Beam Source using Wide Band Gap Semiconductor Photocathode with an NEA surface.
T. Nishitani, M. Tabuchi, T. Meguro, H. Amano, T. Maekawa
The 58th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (Washington DC, USA, May 27 - 30, 2014).

(Invited) Novel Electron Source using Wide Band Gap Semiconductor Photocathode with an NEA surface
T. Nishitani, T. Meguro, M. Tabuchi, H. Amano
International Semiconductor Device Research Symposium 2013 (Marryland, USA, Dec. 11 -13, 2013)

In situ Observation of Negative Electron Affinity Surfaces during Photoelectron Emission by Surface Photo-Absorption Method
K. Hayase, K. Suzuki, Y. Inagaki, R. Chiba, S. Midorikawa, H. Iijima, and T. Meguro
26th International Microprocesses and Nanotechnology Conference (MNC2013), (Sapporo, Japan, Nov. 5 - Nov. 8, 2013)

In Situ Observation of Formation Process of Negative Electron Affinity Surface of GaAs by Surface Photo Absorption
K. Hayase, T. Nishitani, K. Suzuki, H. Imai, J. Hasegawa, D. Namba, T. Meguro
25th International Microprocesses and Nanotechnology Conference (MNC2012), (Kobe, Japan, Oct. 30 - Nov. 2, 2012)

Fabrication of Microstructures on PTFE Surface using Ion Beam Irradiation
A. Kitamura, T. Kobayashi, T. Meguro, A. Suzuki, T. Terai
21st International Microprocesses and Nanotechnology Conference (MNC2008), (Fukuoka, Japan, Oct. 27-30, 2008)

Surface characterization and cell attachment of PTFE using ion beam irradiation
A. Kitamura, T. Kobayashi, T. Meguro, A. Suzuki, T. Terai
Key to the Future - Energy Security and Nuclear Education and Research, (Tokyo, Japan, Oct 8-10, 2008).

High brightness electron source using a superlattice photocathode with long life NEA-surface
T. Nishitani, M. Tabuchi, Y. Takeda, Y. Suzuki, K. Motoki, T. Meguro
Workshop on Sources of Polarized Electrons and High Brightness Electron Beams, (Newport News, USA, Oct.. 1-3, 2008)

Control of cell behavior on PTFE surface using ion beam irradiation
A. Kitamura, T. Kobayashi, T. Meguro, A. Suzuki, T. Terai
16th International Conference on Ion Beam Modification of Materials (IBMM 08), (Dresden, Germany, Aug. 31-Sept.5, 2008)

Formation of convex carbon micro- and nano-disk by atmospheric plasma system
T. Meguro, S. Saitoh, N. Tsuji, Y. Yamamoto, T. Mise, K. Watanabe
6th Asian-European International Conference on Plasma Surface Engineering (AEPSE2007) (Nagasaki, Japan, Sept 24-28, 2007)

A New Approach for Preventing Charging Up of Soft Material Samples by Coating with Conducting Polymers in SIMS Analysis
T. Mise, M. Ishikawa, K. Nishimoto, T. Meguro
16th International Conference on Secondary Ion Mass Spectrometry (SIMS 16) (Kanazawa, Japan, Oct 29 - Nov 2, 2007)

The mechanism of protrusion formation on PTFE surface by ion beam irradiation
A. Kitamura, T. Kobayashi, T. Meguro, A. Suzuki, T. Terai
15th International Conference on Surface Modification of Materials by Ion Beams (SMMIB-15) (Munbai, India, Sept 30 - Oct 6, 2007)

Ion irradiation effecs on carbon nanotube dispersed polyimide thin films
T. Kobayashi, H. Hirao, S. Suzuki, T. Terai, T. Meguro
15th International Conference on Surface Modification of Materials by Ion Beams (SMMIB-15) (Munbai, India, Sept 30 - Oct 6, 2007)

Atomic structure analysis of ErSi2 nanowires formed on Si(100) substrates
Y. Katayama, S. Yokoyama, T. Kobayashi, T. Meguro, X.W. Zhao
20th International Microprocesses and Nanotechnology Conference (Kyoto, Japan, Nov 5-8, 2007)

Electrical properties of ErSi2 nanowires formed on Si substrates
S. Yokoyama, Y. Katayama, T. Kobayashi, T. Meguro, X.W. Zhao
33rd International Conference on Micro- and Nano-Engineering (Copenhagen, Denmark, Sept 23-26, 2007)

Atomic structure analysis of self-assembled ErSi2 nanowires formed on Si substrates
R. Watanabe, Y. Katayama, S. Yokoyama, T. Kobayashi, T. Meguro, X.W. Zhao
Micro and Nano Engineering International Conference 2006 (Barcelona, Spain, Sept. 17-20, 2006)

Synthesis of sillicon nanoparticles using pulsed laser ablation
H.J. Kim, T. Meguro, J. Onoe
2nd COE-INES International Symposium on Innovative Nuclear Energy Systems (Yokohama, Japan, Nov. 26-30, 2006).

The effect of substrate temperature on silicon nanoparticles synthesized by pulsed laser ablation
H.J. Kim, T. Meguro, A. Hida, J. Onoe
Inter-COE International Symposium on Energy Systems (Tokyo, Japan, Oct. 5-7, 2006)

Carbon protrusions fabricated from PTFE
T. Kobayashi, T. Meguro, M. Iwaki, O.Tanaike.
Micro-Nano Process Conference 2005 (Tokyo, Japan, Oct. 26-28, 2005)

Highly charged ion induced surface nano-modification
T. Meguro, T. Ishii, Y. Yamamoto, H. Takai, M. Iwaki
14th International Conference on Surface Modification of Materials by Ion Beams (Kusadasi, Turkey, Sept. 4-9, 2005)

Structures and Mechanisms of Creation of Carbon Nano-Particles on Graphite Induced by Slow Highly Charged Ion Impact
T. Ishii, K. Kobashi, T. Meguro
15th International Workshop on Inelastic Ion Surface Collisions (Ise-Shima, Japan, Oct. 17-22, 2004)

(Invited) Nanoscale modification of electronic states of HOPG by the single impact of HCI
T. Meguro
12th International Conference on Physics of Highly Charged Ions (Vilnius, Lithuania, Sept. 6-11, 2004).

Highly charged ion induced surface modification of carbon
T. Meguro
International Workshop on Atomic Collisions of Slow/Trapped Highly-Charged Ions (Wako, Japan, February 19-21, 2004)

(Invited) Highly charged ion induced nanoscale modification of graphite surface
T. Meguro
Nanoscience and Nanotechnology on Quantum Particles (NNQP 2003) (Tokyo, Japan, December 15-17, 2003)

(Invited) Nanoscale featuring of graphite surface by highly charged ion impact
T. Meguro
12th Annual Meeting of National Conference on Electron, Ion and Photon Beam (EIPB) (Beijing, China, October 22-24, 2003)

Nanoscale featuring of graphite surface by highly charged ion impact
T. Meguro, A. Hida, Y. Koguchi, S. Miyamoto, Y. Yamaguchi, H. Takai, Y. Yamamoto, K. Maeda, Y. Aoyagi
Micro-Nano Process Conference 2002 (Tokyo, Japan, November 6-8, 2002)

Nanoscale Modification of Solid Surfaces by Slow Highly Charged Ion Impact
T. Meguro, A. Hida, Y. Koguchi, H. Takai, K. Maeda, Aoyagi
11th International Conference on Physics of Highly Charged Ions, (Caen, France, September 1-6, 2002)

Analysis of Surface Reactions on Graphite Induced by Slow Highly Charged Ion Impacts
A. Hida, T. Meguro, Y. Aoyagi, K. Maeda
11th International Conference on Physics of Highly Charged Ions, (Caen, France, September 1-6, 2002)

Optogalvanic spectroscopy of silicon atoms
Y. Ueda, T. Iwane, H. Kumagai, T. Meguro, K. Midorikawa, M. Obara
2002 IEEE/LEOS Annual Meeting (Glasgow, UK, November, 2002)

Modification of highly oriented pyrolytic graphite (HOPG) surfaces with highly charged ion (HCI) irradiation
Y. Koguchi, T. Meguro, A. Hida, H. Takai, K. Maeda, Y. Yamamoto,Y. Aoyagi
International Conference on Ion Beam Modificaiton of Materials (IBMM2002) (Kobe, Japan, September 1-6, 2002)

Nanoscale transformation of sp2 to sp3 of graphite by slow highly charged ion irradiation
T. Meguro, A. Hida, M. Suzuki, Y. Koguchi, T. Yuzawa, H. Takai, Y. Yamamoto, K. Maeda, Y. Aoyagi
The 5th International Symposium on Swift Heavy Ions in Matter (SHIM2002), (Giardini Naxos, Italy, May 22-25, 2002).

(Invited) Control of electronic states of surface with highly-charged ion impact
T. Meguro
International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations (ISMAMEE), (Tokyo, Japan, March 4-5, 2002).

Raman spectrosocpic study on highly charged ion irradiated HOPG surface
T. Meguro, A. Hida, M. Suzuki, K. Koguchi, T. Yuzawa, H. Takai, Y. Yamamoto, K. Maeda, Y. Aoyagi,
International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations (ISMAMEE), (Tokyo, Japan, March 4-5, 2002).

Formation of nanoscale features on HOPG surface by highly-charged ion beam irradiation
T. Meguroo, A. Hida, M. Suzuki, K. Koguchi, T. Yuzawa, H. Takai, Y. Yamamoto, K. Maeda, Y. Aoyagi,
The 7th International Symposium on Advanced Physical Fields, (Tsukuba, Japan, Nov. 12-14, 2001).

Nanoscale modification of elecronic state of graphite by highly charged Ar ion irradiation,
T. Meguro, A. Hida, M. Suzuki, K. Koguchi, H. Takai, Y. Yamamoto, K. Maeda, Y. Aoyagi,
The 45th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, (Washington DC, USA, May29 - June 1, 2001)

Ion beam induced dry etching and possibility of highly charged ion beam
T. Meguro and Y. Aoyagi
International RIKEN Symposium on Production of Ultra Slow Highly-Charged Ions and Its Application (Wako, Japan, Dec. 2-3, 1999)

Multiply-charged ion beam induced dry etching of semiconductor materials
T. Meguro, M. Sakamoto, H. Takai, Y. Aoyagi
The 3rd International Conferece on Low Dimentional Structures and Devices (Antalya, Turkey, Sept. 15-17, 1999)

Effects of active hydrogen on atomic layer epitaxy of GaAs
T. Meguro, H. Isshiki, J.-S. Lee, S. Iwai and Y. Aoyagi
The 4th International Symposium on Atomic Layer Epitaxy and Related Surface Processes (Linz, Austria, July 29-31, 1996).

(Invited) Digital etching of GaAs
T. Meguro and Y. Aoyagi
The 4th International Symposium on Atomic Layer Epitaxy and Related Surface Processes (Linz, Austria, July 29-31, 1996).

Selective growth on multi-step arrey on (111)A vicinal surface by atomic layer epitaxy
J.-S. Lee, S. Iwai, H. Isshiki, T. Meguro, T. Sugano and Y. Aoyagi
The 4th International Symposium on Atomic Layer Epitaxy and Related Surface Processes (Linz, Austria, July 29-31, 1996).

(Invited) UV laser activated digital etching of GaAs
T. Meguro and Y. Aoyagi
SPIE Photonics China (Beijing, China, November, 1996)

(Invited) Digital etching of GaAs -the mechanism and the application-
Y. Aoyagi and T. Meguro
IEEE/LEOS 1996 Summer Topical Meetings (Keystone, USA, August, 1996)

Tunable UV laser induced digital etching of GaAs
T. Meguro, K. Sakai, Y. Yamamoto, T. Sugano and Y. Aoyagi
2nd International Conference on Phhoto-Excited Processes and Applications (Jerusalem, Isreal, September, 1995)

Fabrication of modulation-doped quantum wire structures by IR-irradiation assisted atomic layer epitaxy
H. Isshiki, S. Iwai, T. Meguro, Y. Aoyagi and T. Sugano
2nd International Conference on Phhoto-Excited Processes and Applications (Jerusalem, Isreal, September, 1995)

(Invited) Digital Etching of GaAs
T. Meguro
7th Congress of Korean Vacuum Society (Don Teagu, Korea, July, 1994)

(Invited) Selective growth by atomic layer epitaxy and its application to fabrication of low-dimensional quantum structures
H. Isshiki, S. Iwai, T. Meguro, Y. Aoyagi, T. Sugano
3rd International Symposium on Atomic Layer Epitaxy and Related Surface Processes (Sendai, Japan, May, 1994)

Control of etchng reaction of digital etching using tunable UVlaser irradiation
T. Meguro, M. Ishii, T. Sugano, K. Gamo, and Y. Aoyagi
3rd International Symposium on Atomic Layer Epitaxy and Related Surface Processes (Sendai, Japan, May, 1994)

Nanosecond laser-driven reflection high-energy electron diffraction system for time-resolved surface structural analysis
D. Kitriotis, T. Meguro, K. Kitsunai, K. Nishi and Y. Aoyagi
1st International Conference on Photo-Excited Processes and Applications (Sendai, Japan, October 1993)

Digital etching by using laser beam: photo-induced etching with atomic order controllability
M. Ishii, T. Meguro, K. Gamo, and Y. Aoyagi
1st International Conference on Photo-Excited Processes and Applications (Sendai, Japan, October 1993)

Reduction of carbon impurity in GaAs by photo irradiation in atomic layer epitaxy
S. Iwai, T. Meguro, H. Isshiki, T. Sugano and Y. Aoyagi
1st International Conference on Photo-Excited Processes and Applications (Sendai, Japan, October 1993)

(Invited) Beam assisted digital etching of compound semiconductors
Y. Aoyagi and T. Meguro
3rd International Conference on Advanced Materials (Tokyo, Japan, Sept. 1993)

Surface photo-absorption stdy of the laser-assisted atomic layer epitaxial growth process of GaAs
J. P. Simko, T. Meguro, S. Iwai, K. Ozasa, Y. Aoyagi and T. Sugano
2nd International Symposium on Atomic Layer Epitaxy (Raleigh, USA, June 1992)

Surface processes in digital etching of GaAs
T. Meguro, M. Ishii, H. Kodama, Y. Yamamoto, K. Gamo, and Y. Aoyagi
2nd International Symposium on Atomic Layer Epitaxy Epitaxy (Raleigh, USA, June 1992)

Microscopic mechanisms of accurate layer-by-layer growth of b-SiC
S. Hara, T. Meguro, Y. Aoyagi, M. Kawai, S. Misawa, E. Sakuma and S. Yoshida
2nd International Symposium on Atomic Layer Epitaxy (Raleigh, USA, June 1992)

The laser-assisted atomic layer epitaxial growth mechanism of gallium arsenide studied by the SPA method
J. P. Simko, T. Meguro, S. Iwai, K. Ozasa, Y. Aoyagi and T. Sugano
International Workshop on Science and Technology for Surface Reaction Process (Tokyo, Japan, January 1992)

Analytical study on surface reaction process in digital etching
M. Ishii, T. Meguro, H. Kodama, Y. Yamamoto and Y. Aoyagi
International Workshop on Science and Technology for Surface Reaction Process (Tokyo, Japan, January 1992)

Low temperature hydrogen radical beam cleaning and subsequent temination of GaAs surfaces
P. O'Keefe, C. O'Morain, S. Komuro, M. Ishii, T. Meguro, Y. Iimura, S. Den, T. Morikawa, Y. Aoyagi, and S. Namba
International Workshop on Science and Technology for Surface Reaction Process (Tokyo, Japan, January 1992)

Reaction processes in deigital etching
M. Ishii, H. Kodama, T. Meguro, Y. Aoyagi and Y. Yamamoto
The 1st International Conference on Intelligent Materials (Ohiso, Japan, 1992)

(Invited) Beam assisted atomic layer manipulation
Y. Aoyagi, T. Meguro, S. Iwai and J. P. Simko
Laser Advanced Materials Processing (LAMP '92) (Niigata, Japan, 1992)

(Invited) Beam assisted atomic layer controlled epitaxy and etching of GaAs
T. Meguro and Y. Aoyagi
1991 MRS spring meeting (Anaheim, USA, May 1991)

(Invited) Atomic layer epitaxy and atomic layer etching
Y. Aoyagi, T. Meguro, and S. Iwai
International Workshop on Science Technology of Thin Films for the 21th Century (Evanston, July 1991)

Control of ALE window in ALE of GaAs
T. Meguro, T. Arai, S. Iwai, A. Hirata, Y. Aoyagi
The 7th International Conference on Vapor Growth and Epitaxy (Nagoya, Japan, July 1991)

(Invited) III-V beam assisted processes and mechanism
Y. Aoyagi, T. Meguro, and S. Iwai
1st International Symposium on Atomic Layer Epitaxy (Espoo, Finland, June 1990)

Digital etching; new approach of layer-by-laer processing
T. Meguro, M. Ishii, M. Hamagaki, T. Hara, Y. Yamamoto and Y. Aoyagi
1st International Symposium on Atomic Layer Epitaxy (Espoo, Finland, June 1990)

Patterned crystal growth of GaAs by laser scanning in atomic layer epitaxy
S. Iwai, T. Meguro, and Y. Aoyagi
5th International Conference on Metalorganic Vapor Phase Epitaxy (Aachen, Germany, June 1990)

Study on laser-induced decomposition of alkylgallium molecules in laser-atomic layer epitaxy of GaAs
T. Meguro, S. Iwai, Y. Aoyagi, T. Arai, and A. Hirata
5th International Conference on Metalorganic Vapor Phase Epitaxy (Aachen, Germany, June 1990)

Layer-by-layer controlled digital etchng by means of an electron-beam-excited plasma system
T. Meguro, M .Ishii, H. Kodama, M. Hamagaki, T. Hara, Y. Yamamoto and Y. Aoyagi
The 1990 International MicroProcessConference (Chiba, Japan, July 1990)

Digital etching of GaAs using alternativeincidence of Cl radicals and low energy Ar ions
T. Meguro, M .Ishii, H. Kodama, M. Hamagaki, T. Hara, Y. Yamamoto and Y. Aoyagi
The 22nd (1990 International) Conference on Solid State Devices and Materials (Sendai, Japan, August 1990)

Atomic layer epitaxy of AlAs and AlGaAs
T. Meguro, S. Iwai, Y. Aoyagi, K. Ozaki, Y. Yamamoto, T. Suzuki, Y. Okano, A. Hirata
The 9th International Conference on Crystal Growth (Nagoya, Japan,1989)

(Invited) Laser defined epitaxial growth of GaAs
Y. Aoaygi, T. Meguro, A. Doi, S. Iwai and S. Namba
CLEO '88 (Anaheim, USA, April 1988).

(Invited) Laser atomic layer epitaxy and the growth mechanism
Y. Aoaygi, A. Doi, T. Meguro, S. Iwai and S. Namba
International Conference on Electronic Materials (Tokyo, Japan, June 1988)

(Invited) Laser atomic line epitaxy of GaAs
Y. Aoyagi, S.Iwai, T. Meguro and A. Doi
International Sessions of 1988 KIEE Annual Conference (Seoul, Korea, Nov. 1988)

Surface processes in laser-atomic layer epitaxy (laser ALE) of GaAs
T. Meguro, T. Suzuki, A. Hirata, K. Ozaki, Y. Yamamoto, S. Iwai, Y. Aoyagi and S. Namba
4th International Conference on Metalorganic Vapor Phase Epitaxy (Hakone, Japan, June 1988)

Laser atomic layer epitaxy of GaAs and AlAs and the applicaiton to line epitaxy
Y. Aoyagi, A, Doi, S, Iwai, T. Meguro
Topical Conf. on Selected Area Processing (Atlanta, USA, Oct. 1987).

Effect of incident angle an polarization of CO2 laser on SiH4 cracking
T. Meguro, H. Kojima, T. Itoh, K. Midorikawa, P. H. Kim, H. Tashiro, S. Namba
Electrochemical Society 165th Meeting (Cincinnatti, USA, May 1984)

Angular and temperature dependences employing Ar+/Cl2 system
T. Meguro, T. Itoh, H. Okano and Y. Horiike
1st International Symposium on Dry Process (Tokyo, Japan, November 1981)