Activities — Publication —



Publication


An EDX study of alkali antimonide photocathodes (In Japanese)
H. Iijima, S. Midorikawa, T. Meguro
Proceedings of the 11th Annual Meeting of Particle Accelerator Society of Japan, pp. 921 - 924 (2014).

In situ Observation of Negative Electron Affinitiy Surfaces during Photoelectron Emission by Photo-Absorption Method.
K. Hayase, K. Suzuki, Y. Inagaki, R. Chiba, H. Iijima, T. Meguro
Proc. of 32nd Symposium on Materials Science and Engineering Research Center of Ion Beam Technology Hosei University, pp. 27 - 30 (2014).

In situ Observation of Formation Process of Negative Electron Affinity Surface of GaAs by Surface Photo-Absorption
K. Hayase, T. Nishitani, K. Suzuki, H, Imai, J. Hasegawa, D. Namba, T. Meguro
Jpn. J. Appl. Phys., 52, 06GG05-1 - 06GG05-3 (2013).

A Study on NEA (Negative Electron Affinity) Nature on Textured Surfaces.
M. Hirao, K. Hayase, F. Sekita, Y. Yamatani, T. Shiokawa, H. Akimoto, T. Meguro
Proc. of 31st Symposium on Materials Science and Engineering Research Center of Ion Beam Technology Hosei University , pp. 35 - 38 (2013),

In situ Observation of Formation Process of NEA Surface of GaAs by Surface Photo-Absorption
K. Hayase, T. Nishitani, K. Suzuki, H. Imai, J. Hasegawa, D. Namba, T. Meguro
Proc. of 31st Symposium on Materials Science and Engineering Research Center of Ion Beam Technology Hosei University , pp. 31 - 34 (2013),

Quantum yield degredation from excitation photocurrent and residual gas in a p-type GaN photocathode with an NEA surface (In Japanese)
K. Hayase, T. Nishitani, T. Meguro
IEEJ Transactions on Electronics, Information and Systems, 132, 1261-1264 (2012) .

High-Brightness Spin-Polarized Electron Source Using Semiconductor Photocathodes,
T. Nishitani, M. Tabuchi, Y. Takeda, Y. Suzuki, K. Motoki, T. Meguro
Jpn. J. Appl. Phys. 48, 06FF02-1–06FF02-3 (2009).

Superlattice photocathode with high brightmess and long NEA-surface lifetime
T. Nishitani, M. Tabuchi, Y. Takeda, Y. Suzuki, K. Motoki, T. Meguro
AIP Conf. Proc., 1149, 1047-1051 (2009).

Structure analysis of self-assembled ErSi2 nanowires formed on Si (110) substrates (In Japanese)
Y. Katayama, R. Watanabe, T. Kobayashi, T. Meguro, X.W. Zhao
IEEJ Transactions on Electronics, Information and Systems., 167, 58–62 (2009).

Oxidation and photoluminescence of ErSi2 nanowires formed on Si substrates
Y. Katayama, S. Harako, T. Kobayashi, T. Meguro, S. Komuro and X. W. Zhao
Microelectron. Eng. 86, 1155 (2009).

Control of cell behavior on PTFE surface using ion beam irradiation
A. Kitamura, T. Kobayashi, T. Meguro, A. Suzuki and T. Terai
Nucl. Instrum. Meth. in Phys. Res., B267, 1638–1641 (2009).

The mechanism of protrusion formation on PTFE surface by ion beam irradiation
A. Kitamura, T. Kobayashi, T. Meguro, A. Suzuki, T. Terai
Surf. Coat. Technol., 203, 2406-2409 (2009).

Ion beam irradiation and annealing effects on carbon nanotube dispersed polyimide thin films
T. Kobayashi, H. Hirao, S. Suzuki, T. Terai, T. Meguro
Surf. Coat. Technol., 203, 2472-2475 (2009)

Formation of convex micro- and nano-disk by atmospheric plasma system.
T. Meguro, N. Tsuji, S. Saito, Y. Yamamoto, T. Mise, K. Watanabe
Surf. Coat. Technol. 202, 5356-5359 (2008)

A New Approach for Preventing Charging Up of Soft Material Samples by Coating with Conducting Polymers in SIMS Analysis
T. Mise, M. Ishikawa, K. Nishimoto, T. Meguro
Appl. Surf. Sci., 255, 1113-1115 (2008)

Electrical properties of ErSi2 nanowires formed on Si substrates
S. Yokoyama, Y. Katayama, T. Kobayashi, T. Meguro, X.W. Zhao
Microelec. Eng., 85, 1253-1256 (2008).

Atomic structure analysis of ErSi2 nanowires formed on Si(100) substrates.
Y. Katayama, S. Yokoyama, T. Kobayashi, T. Meguro, X.W. Zhao
Jpn. J. Appl. Phys., 47, 5015-5017 (2008).

Surface modification and cell adhesion of PTFE using ion-beam irradiation
A. Kitamura, T. Kobayashi, T. Meguro, A. Suzuki, T. Terai
Trans. Mater. Res. Soc. Jpn., 33, 1035-1038 (2008).

Highly charged ion induced surface nano-modification
T. Meguro, K. Kobashi, T. Ishii, Y. Yamamoto, H. Takai, M. Iwaki
Surf. Coat. Technol. 201, 8452-8455 (2007).

Effects of Slow Highly Charged Ion Impact Upon Highly Oriented Pyrolytic Graphite---Nanoscale Modification of Electronic States of Graphite Surface---
T. Meguro
IEEJ Transactions on Electronics, Information and Systems, 127, 1329 (2007)

Cell adhesion to nitrogen-doped DLCs fabricated by a plasma-based ion implantation and deposition method using toluene gas
T. Yokota, T. Terai, T. Kobayashi, T. Meguro, M. Iwaki
Surf. Coat. Technol. 201, 8048-8051 (2007).

Atomic structure analysis of self-assembled ErSi2 nanowires formed on Si substrates
R. Watanabe, Y. Katayama, S. Yokoyama, T. Kobayashi, T. Meguro, X.W. Zhao
Microelectron. Eng. 84, 1496-1498 (2007).

プロセスモニタリング及び試料評価技術 ー 表面構造・組成評価技術 ー
目黒多加志
最新レーザープロセシングの基礎と応用(杉岡幸次・編、2007年)

Structure Analysis of Self-Assembled ErSi2 Nanowires Formed on Si(110) Substrates
Y. Katayama, R. Watanabe, T. Kobayashi, T. Meguro, X.W. Zhao
IEEJ Transactions on Electronics, Information and Systems, 127, 1294-1297 (2007) .

Formation and Structure Analysis of Very Long ErSi2 Nanowires Formed on Si(110) Substrates
R. Watanabe, S. Harako, T. Kuzuu, K. Kouno, T. Kobayashi, T. Meguro, X.W. Zhao
Jpn. J. Appl. Phys., 45, 5535-5537 (2006)

Nanoscale modification of electronic states of HOPG by the single impact of HCI
T. Meguro, Y. Yamaguchi, H. Fukagawa, Y. Yamaguchi, H. Takai, N. Hanano, Y. Yamamoto, K. Kobashi, T. Ishii
Nuclear Instrum. Meth. B235, 431-437 (2005).

Cytoplasmic Molecular Delivery by Hematoporphyrin Derivative-based Photodynamic Treatment Using High-intensity Pulsed Laser Irradiation
Y. Miyamoto, Y. Suzuki, T. Meguro, and M. Iwaki
Chem. Lett. 33, 240-241 (2004)

Optogalvanic spectroscopy of silicon atoms
Y. Ueda, H. Kumagai, T. Meguro, K. Midorikawa, M. Obara
Nuclear Instrum. Meth. B215, 419-422 (2004).

Nanoscale transformation of sp2 to sp3 of graphite by slow highly charged ion irradiation
T. Meguro, A. Hida, Y. Koguchi, S. Miyamoto, Y. Yamamoto, H. Takai, K. Maeda,Y. Aoyagi
Nuclear Instrum. Meth. B209, 170-174 (2003)

Modification of highly oriented pyrolytic graphite (HOPG) surfaces with highly charged ion (HCI) irradiation
Y. Koguchi, T. Meguro, A. Hida, H. Takai, K. Maeda, Y. Yamamoto and Y. Aoyagi
Nuclear Instrum. Meth. B206, 202-205 (2003)

Analysis of Surface Modification on Graphite Induced by Slow Highly Charged Ion Impacts
A. Hida, T. Meguro, K. Maeda, Y. Aoyagi
Nuclear Instrum. Meth. B205, 736-740 (2003)

Structural change of radiation defects in graphite crystals induced by STM probing
O.Tonomura, Y. Mera, A. Hida, Y. Nakamura, T. Meguro, K. Maeda
Appl. Phys. A74, 311-316 (2002) .

Creation of nano-diamonds by the single impacts of highly charged ions upon graphite
T. Meguro, A. Hida, M. Suzuki, Y. Koguchi, H. Takai, Y. Yamamoto, K. Maeda, Y. Aoyagi
Appl. Phys. Lett. 79, 3866-3868 (2001).

Nanoscale modification of electronic state of graphite by highly charged Ar ion irradiation
T. Meguro, A. Hida, M. Suzuki, Y. Koguchi, H. Takai, Y. Yamamoto, K. Maeda, Y. Aoyagi
J. Vac. Sci. & Technol. B19, 2745-2748 (2001).

p-type doping of hydrogenated amorphous silicon films with boron by reactive radio-frequency co-sputtering
Y. Ohmura, M. Takahashi, M. Suzuki, N. Sakamoto and T. Meguro
Physica B: Condensed Matter, 308-310, 257-260 (2001).

Multiply-charged ion beam induced dry etching of semiconductor materials
T. Meguro, M. Sakamoto, H. Takai and Y. Aoyagi
Mat. Sci. Eng., B74, 40-44 (2000).

Ion beam induced dry etching and possibility of highly charged ion beam
T. Meguro and Y. Aoyagi
RIKEN Rev. 31, 48-51 (2000).

(翻訳)ナノ創製技術とその量子機能デバイスへの応用
C. D. W. Wilkinson, "Nanofabrication technology and its application in quantum functional devices", 新機能素子研究開発協会、1996年

Digital etching of GaAs
T. Meguro and Y. Aoyagi
Appl. Surf. Sci. 112, 55-62 (1997).

Effects of active hydrogen on atomic layer epitaxy of GaAs
T. Meguro, H. Isshiki, J.-S. Lee, S. Iwai and Y. Aoyagi
Appl. Surf. Sci. 112, 118-121 (1997).

UV laser activated digital etching of GaAs
T. Meguro and Y. Aoyagi
SPIE Proc. 2888, 88-95 (1996).

Tunable UV laser induced digital etching of GaAs: Wavelength dependence of etch rate and surface processes
T. Meguro, K. Sakai, Y. Yamamoto, T. Sugano and T. Aoyagi
Appl. Surf. Sci. 106, 365-368 (1996).

Self-limiting growth on nominally oriented (111)A GaAs substrates in atomic layer epitaxy
J.-S. Lee, S. Iwai, H. Isshiki, T. Meguro, T. Sugano and Y. Aoyagi
Appl. Surf. Sci. 103, 275-278 (1996).

Atomic layer epitaxy of GaAs and GaAsxP1-x on nominally oriented GaAs(111) substrates with high quality surface and interfaces
J.-S. Lee, S. Iwai, H. Isshiki, T. Meguro, T. Sugano and Y. Aoyagi
J. Cryst. Growth 160, 21-26 (1996).

レーザーALE
目黒多加志、青柳克信
レーザー研究, 24, 948 (1996).

化合物半導体のMOCVD
目黒多加志
化学工学, 60, 876 (1996).

Step induced desorption of AsHx in atomic layer epitaxy on GaAs(001) vicinal substrates
J.-S. Lee, S. Iwai, H. Isshiki, T. Meguro, T. Sugano and Y. Aoyagi
Appl. Phys. Lett. 67, 1283-1285 (1995).

Surface reaction control in digital etching of GaAs by using tunable UV laser system: Reaction control mechanism in layer-by-layer etching
M. Ishii, T. Meguro, T. Sugano, K. Gamo and Y. Aoyagi
Appl. Surf. Sci. 86, 554-558 (1995).

Characterization of GaAs/GaAsP quantum wire structures fabricated by atomic layer epitaxy
H. Isshiki, Y. Aoyagi, T. Sugano, S. Iwai and T. Meguro
J. Appl. Phys. 78, 7277-7281 (1995).

波長可変レーザーと塩素を用いたGaAsの原子層エッチング
目黒多加志、石井真史、青柳克信
応用物理, 64, 157 (1995).

Solid-state tunable deep ultraviolet laser system from 198 to 300 nm
T. Meguro, T. Caughy, L. Wolf and Y. Aoyagi
Opt. Lett. 19, 102-104 (1994).

Control of etching reaction of digital etching using tunable UV laser irradiation
T. Meguro, M. Ishii, K. Gamo, T. Sugano and Y. Aoyagi
Appl. Surf. Sci. 82/83, 193-199 (1994).

Digital etching by using laser beam: On the control of digital etching products
M. Ishii, T. Meguro, K. Gamo, T. Sugano and Y. Aoyagi
Appl. Surf. Sci. 79/80, 104-109 (1994).

Reduction of carbon impurity in GaAs by photo-irradiation in atomic layer epitaxy
S. Iwai, T. Meguro, H. Isshiki, T. Sugano and Y. Aoyagi
Appl. Surf. Sci. 79/80, 232-236 (1994).

Rectangular shaped quantum wire fabrication by growth mode switching between isotropic and anisotropic atomic layer epitaxy
H. Isshiki, S. Iwai, T. Meguro, Y. Aoyagi and T. Sugano
J. Cryst. Growth 145, 976-977 (1994).

GaAs crystallographic selective growth by atomic layer epitaxy and its application to fabrication of quantum wire structures
H. Isshiki, Y. Aoyagi, T. Sugano, S. Iwai and T. Meguro
Inst. Phys. Conf. Ser. 136, 643-648 (1994).

Surface processes of selective growth by atomic layer epitaxy
H. Isshiki, Y. Aoyagi, T. Sugano, S. Iwai and T. Meguro
Appl. Surf. Sci. 82/83, 57-63 (1994).

原子オーダーエッチング
堀池靖浩、目黒多加志
メゾスコピック現象の基礎(難波進・編、 オーム社、東京、1994年), pp. 156-172.

Surface processes in digital etching of GaAs
T. Meguro, M. Ishii, K. Kodama, Y. Yamamoto, K. Gamo and Y. Aoyagi
Thin Solid Films 225, 136-139 (1993).

Crystallographic selective growth of GaAs by atomic layer epitaxy
H. Isshiki, Y. Aoyagi, T. Sugano, S. Iwai and T. Meguro
Appl. Phys. Lett. 63, 1528-1530 (1993).

Surface photo-absorption study of the laser-assisted atomic layer epitaxial growth process of GaAs
J. P. Simko, T. Meguro, S. Iwai, K. Ozasa, Y. Aoyagi and T. Sugano
Thin Solid Films 225, 40-46 (1993).

Microscopic mechanism of accurate layer-by-layer growth of SiC
S. Hara, T. Meguro, Y. Aoyagi, M. Kawai, S. Misawa, E. Sakuma and S. Yoshida
Thin Solid Films 225, 240-243 (1993).

Digital etching using KrF excimer laser: Approach to atomic order controlled etching by photo-induced reaction
M. Ishii, T. Meguro, K. Gamo, T. Sugano and T. Aoyagi
Jpn. J. Appl. Phys. 32, 6178-6181 (1993).

Formation of low-dimensional structures by atomic layer epitaxy
H. Isshiki, Y. Aoyagi, T. Sugano, S. Iwai and T. Meguro
OPTOELECTRONICS -Devices and Technologies- 8, 509-514 (1993).

GaAsデジタルエッチング技術
目黒多加志、青柳克信
Semiconductor World 12, 70-75 (1993).

Direct observation of self-limiting gallium deposition on GaAs during laser-atomic layer epitaxial processing
J. P. Simko, T. Meguro, S. Iwai, K. Ozasa, A. Hirata, Y. Aoyagi and T. Sugano
Jpn. J. Appl. Phys. 31, L1518-L1521 (1992).

Reversible reconstruction changes in GaAs surfaces due to hydrogen termination
P. O'Keeffe, C. O'Morain, S. Komuro, S. Ishii, T. Meguro, Y. Iimura, S. Den, T. Morikawa and Y. Aoyagi
Jpn. J. Appl. Phys. 31, 3301-3302 (1992).

Study of surface processes in the digital etching of GaAs
M. Ishii, T. Meguro, H. Kodama, Y. Yamamoto and Y. Aoyagi
Jpn. J. Appl. Phys. 31, 2212-2215 (1992).

Nanosecond laser-driven reflection high energy electron diffraction system providing digital imaging in real time
D. Kitriotis, K. Ozasa, T. Meguro, S. Shimoda, K. Nishi and Y. Aoyagi
Appl. Phys. Lett. 60, 1636-1638 (1992).

原子層エピタキシャル成長技術
目黒多加志、岩井荘八、青柳克信
電子情報通信学会誌 75, 1326-1330 (1992).

III-V族化合物半導体の表面精密加工技術(原子層エピタキシー)
目黒多加志、青柳克信
真空 36, 73-77 (1992).

Patterned crystal growth of GaAs using laser scanning with atomic layer epitaxy
S. Iwai, T. Meguro and Y. Aoyagi
J. Cryst. Growth 107, 136-140 (1991).

Laser-assisted atomic layer epitaxy
Y. Aoyagi, T. Meguro, S. Iwai and A. Doi
Mat. Sci. Eng. B10, 121-132 (1991).

Beam assisted layer-by-layer controlled epitaxy and etching
T. Meguro and Y. Aoyagi
Mat. Res. Soc. Symp. Proc. 222, l21-128 (1991).

Atomic layer epitaxy and its growth mechanism of III-V compound semiconductors using laser-metalorganic vapor phase epitaxy
A. Hirata, T. Arai, T. Meguro, S. Iwai and Y. Aoyagi
Bull. Sci. Eng. Res. Lab., Waseda Univ. 131, 14 (1991).

Photo-activated epitaxial growth
Y. Aoyagi, T. Meguro and S. Iwai
Chaper 4 of "Low temperature epitaxial growth of semiconductors", ed. by T. Hariu, (World Scientific, 1991), pp. 199-290.

デジタルエッチング
目黒多加志, 青柳克信
表面科学, 12, 256-270 (1991).

GaAs, AlAs及びAlGaAsのレーザー原子層結晶成長の表面過程
青柳克信、岩井荘八、目黒多加志
電気化学 59, 1037 (1991).

米国材料学会(MRS)1991年春季大会報告
白木靖寛,目黒多加志
応用物理, 60, 1152 (1991).

Layer-by-layer controlled digital etching by means of an electron-beam-excited plasma system
T. Meguro, M. Ishii, H. Kodama, M. Hamagaki, T. Hara, Y. Yamamoto and Y. Aoyagi
Jpn. J. Appl. Phys. 29, 2216-2219 (1990).

Reduction of textural drift in a lase recrystallized silicon-on-insulator structure employing liquid encapsulation
A. Doi, T. Meguro and S. Aoyagi
Jpn. J. Appl. Phys. 29, L847-L849 (1990).

GaAsのレーザー誘起原子層エピタキシーにおけるサーマルパルス同時照射効果
目黒多加志、岩井荘八、青柳吉信、難波進
化学工学論文集 16, 620-623 (1990).

Beam assisted layer-by-layer processes and the mechanism in III-V compounds
Y. Aoyagi, T. Meguro and S. Iwai
Acta Polytech. Scand. Ch195, 55-64 (1990).

Atomic layer epitaxy of AlAs and AlGaAs
T. Meguro, S. Iwai, Y. Aoyagi, K. Ozaki, Y. Yamamoto, T. Suzuki, Y. Okano and A. Hirata
J. Cryst. Growth 99, 540-544 (1990).

Digital etching of GaAs: New approach of dry etching to atomic ordered processing
T. Meguro, M. Hamagaki, S. Modarassi, T. Hara, Y. Aoyagi, M. Ishii and Y. Yamamoto
Appl. Phys. Lett. 56, 1552-1554 (1990).

Digital etching: New approach of layer-by-layer processing
T. Meguro, M. Ishii, M. Hamagaki, H. T., Y. Yamamoto and Y. Aoyagi
Acta Polytech. Scand. Ch193, 163-168 (1990).

GaAsのレーザー誘起原子層エピタキシィ
目黒多加志、岩井荘八、青柳克信、難波進
化学工学 54, 679-682 (1990).

Mechanism and application of laser atomic layer epitaxy
Y. Aoyagi, A. Doi, T. Meguro, S. Iwai, K. Nagata and S. Nonoyama
Chemtronics 4, 117 (1989).

レーザー誘起原子層結晶成長
目黒多加志、青柳克信
表面技術40, 869-873 (1989).

MOVPE法を利用した原子層結晶成長
目黒多加志、岩井荘八、青柳克信
プレーティングとコーティング 9, 128-131 (1989).

Monolayer growth and direct writing of GaAs by pulsed laser metalorganic vapor phase epitaxy
S. Iwai, T. Meguro, A. Doi, Y. Aoyagi and S. Namba
Thin Solid Films 163, 405-408 (1988).

A growth analysis for metalorganic vapor phase epitaxy of GaAs
A. Doi, S. Iwai, T. Meguro and S. Namba
Jpn. J. Appl. Phys. 27, 795-800 (1988).

Surface processes of laser-atomic layer epitaxy (laser-ALE) of GaAs
T. Meguro, T. Suzuki, K. Ozaki, Y. Okano, A. Hirata, Y. Yamamoto, S. Iwai, Y. Aoyagi and S. Namba
J. Cryst. Growth 93, 190-194 (1988).

Analytical study on interface of epitaxial Si on Si substrate grown by CO2 laser CVD
T. Meguro, N. Ikeda and T. Itoh
J. Electrochem. Soc. 135, 2046 (1988).

レーザー単原子層制御結晶成長の機構と応用
目黒多加志,岩井荘八,青柳克信
応用物理、57, (1988).

Impurity doping during Si epitaxy by means of CO2 laser CVD
T. Meguro, O. Okabayashi and T. Itoh
J. Electrochem. Soc. 134, 2345-2347 (1987).

Siエピタキシーと表面反応
伊藤糾次、目黒多加志
光励起プロセスハンドブック(高橋清・編、サイエンスフォーラム、東京、1987年), pp. 200-210.

Low-temperature silicon epitaxial growth by CO2 laser CVD using SiH4 gas
T. Meguro, Y. Ishihara, T. Itoh and H. Tashiro
Jpn. J. Appl. Phys. 25, 524-527 (1986).

IImplantepitaxy by means of silicon MBE
T. Itoh, T. Meguro and K. Yonemoto
VLSI Science nad Technology (The Electrochemical Society, 1984), p. 455